CSIM User Manual
Subsections
Read/writable Fields
Readonly Fields
dNACNeuron
Uses
AChannel_Hoffman97
Read/writable Fields
STempHeight
(
Volt
) :
Height
Vthresh
(
V
) :
If
V
m
exceeds
V
thresh
a spike is emmited.
Vreset
(
V
) :
The voltage to reset
V
m
to after a spike.
doReset
(
flag
) :
Flag which determines wheter
V
m
should be reseted after a spike
Trefract
(
sec
) :
Length of the absolute refractory period.
nummethod
(
flag
) :
Numerical method for the solution of the differential equation: Exp. Euler = 0, Crank-Nicolson = 1
type
:
Type (e.g. inhibitory or excitatory) of the neuron
Cm
(
F
) :
The membrane capacity
C
m
Rm
(
Ohm
) :
The membrane resistance
R
m
Vresting
(
V
) :
The resting membrane voltage.
Vinit
(
V
) :
Initial condition for
V
m
at time
t
=0
.
VmScale
(
V
) :
Defines the difference between Vresting and the Vthresh for the calculation of the iongate tables and the ionbuffer Erev.
Inoise
(
W
2
) :
Variance of the noise to be added each integration time constant.
Iinject
(
A
) :
Constant current to be injected into the CB neuron.
Readonly Fields
Em
(
V
) :
The reversal potential of the leakage channel
Vm
(
V
) :
The membrane voltage
Isyn
:
synaptic input current
Gsyn
:
synaptic input conductance
nIncoming
:
Number of incoming synapses
nOutgoing
:
Number of outgoing synapses
nBuffers
:
Number of ion buffers
nChannels
:
Number of channels
DiscretizationPreprocessor
dNACOUNeuron