Subsections
TraubsHHNeuron
This model is a modified version of Traub's model of Na/K currents for action potentials in hippocampal pyramidal cells, which was modified from HH equations to fit the kinetics of those neurons; the rate constants correspond to a temperature of 36 deg C
The model is based on a CbNeuron and includes the Traubs_HH_K_Channel and Traubs_HH_Na_Channel for action potetial generation.
INa = gNa
m
3
h
(v-ENa) IKd = gKd
n
4
(v-EK)
m' = (m_inf - m) / tau_m h' = (h_inf - h) / tau_h n' = (n_inf - n) / tau_n
v2 = v - Vtr
alpha_m = 0.32
(13-v2) / ( exp((13-v2)/4) - 1) beta_m = 0.28
(v2-40) / ( exp((v2-40)/5) - 1) tau_m = 1 / (alpha_m + beta_m) m_inf = alpha_m / (alpha_m + beta_m)
alpha_h = 0.128
exp((17-v2)/18) beta_h = 4 / ( 1 + exp((40-v2)/5) ) tau_h = 1 / (alpha_h + beta_h) h_inf = alpha_h / (alpha_h + beta_h)
alpha_n = 0.032
(15-v2) / ( exp((15-v2)/5) - 1) beta_n = 0.5
exp((10-v2)/40) tau_n = 1 / (alpha_n + beta_n) n_inf = alpha_n / (alpha_n + beta_n)
HH parameters:
gNa = 0.1 S/cm2 gKd = 0.03 S/cm2 ENa = 50 mV EK = -90 mV Vtr = -63 mV (adjusts threshold to around -50 mV)
- Vthresh (V) :
- If Vm exceeds Vthresh a spike is emmited.
- Vreset (V) :
- The voltage to reset Vm to after a spike.
- doReset (flag) :
- Flag which determines wheter Vm should be reseted after a spike
- Trefract (sec) :
- Length of the absolute refractory period.
- nummethod (flag) :
- Numerical method for the solution of the differential equation: Exp. Euler = 0, Crank-Nicolson = 1
- type :
- Type (e.g. inhibitory or excitatory) of the neuron
- Cm (F) :
- The membrane capacity Cm
- Rm (Ohm) :
- The membrane resistance Rm
- Vresting (V) :
- The resting membrane voltage.
- Vinit (V) :
- Initial condition forVm at time t=0.
- VmScale (V) :
- Defines the difference between Vresting and the Vthresh for the calculation of the iongate tables and the ionbuffer Erev.
- Inoise (W2) :
- Variance of the noise to be added each integration time constant.
- Iinject (A) :
- Constant current to be injected into the CB neuron.
- Em (V) :
- The reversal potential of the leakage channel
- Vm (V) :
- The membrane voltage
- Isyn :
- synaptic input current
- Gsyn :
- synaptic input conductance
- nIncoming :
- Number of incoming synapses
- nOutgoing :
- Number of outgoing synapses
- nBuffers :
- Number of ion buffers
- nChannels :
- Number of channels